Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomerates

被引:151
作者
Gole, JL [1 ]
Stout, JD
Rauch, WL
Wang, ZL
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mat Sci Engn, Atlanta, GA 30332 USA
关键词
D O I
10.1063/1.126341
中图分类号
O59 [应用物理学];
学科分类号
摘要
Elevated temperature synthesis has been used to generate virtually defect free SiO2 sheathed crystalline silicon nanowires and silica (SiO2) nanospheres which can be agglomerated to wire-like configurations impregnated with crystalline silicon. The SiO2 passivated (sheathed) crystalline silicon nanowires, generated with a modified approach using a heated Si-SiO2 mix, with their axes parallel to [111] are found to be virtually defect free. Modifications to the system allow the simultaneous formation of SiO2 nanospheres (d similar to 10-30 nm) as virtually monodisperse gram quantity powders which form large surface area catalysts for the selective conversion of ethanol to acetaldehyde. (C) 2000 American Institute of Physics. [S0003-6951(00)00717-8].
引用
收藏
页码:2346 / 2348
页数:3
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