Radiative defects and optical response in oriented para-hexaphenyl films

被引:13
作者
Ariu, M
Bongiovanni, G [1 ]
Loi, MA
Mura, A
Piaggi, A
Rossi, L
Graupner, W
Meghdadi, F
Leising, G
机构
[1] Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy
[2] Univ Cagliari, Ist Nazl Fis Mat, I-09042 Monserrato, CA, Italy
[3] Univ Sassari, Ist Matemat & Fis, I-07100 Sassari, Italy
[4] Univ Sassari, Ist Nazl Fis Mat, I-07100 Sassari, Italy
[5] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[6] Graz Tech Univ, Inst Festkorperphys, A-8010 Graz, Austria
关键词
D O I
10.1016/S0009-2614(99)00982-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The optical properties of an ordered para-hexaphenyl film, grown with molecules lying parallel to the substrate, are investigated. The absorption spectrum exhibits two peaks at 3.1(L) and 4.35(H) eV, featuring a different degree of polarization. The photoluminescence emission and the absorption at 3.1 eV are highly polarized. The presence of the L peak is strongly related to the growth conditions, and is favored at high deposition rates and low substrate temperatures. Upon 4.66 eV ultraviolet irradiation in air, the photoluminescence intensity and the absorption at 3.1 eV are reduced. Conversely, transitions at higher energies are almost unaffected by irradiation, Experimental data show that the L peak and emission arise from a crystal defect. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:405 / 410
页数:6
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