Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags

被引:92
作者
Steudel, Soeren
De Vusser, Stijn
Myny, Kris
Lenes, Martijn
Genoe, Jan
Heremans, Paul
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium
[3] Univ Groningen, Dept Phys, Groningen, Netherlands
关键词
D O I
10.1063/1.2202243
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, we compare the direct current (dc) and high-frequency performance of two different organic diode structures, a vertical diode and an organic field effect transistor (OTFT) with shorted drain-gate contact, regarding their application in a rectifying circuit. For this purpose, we fabricated both diode structures using the organic semiconductor pentacene. dc measurements were performed showing a space-charge-limited current mobility of more than 0.1 cm(2)/V s for the vertical diode and a field effect mobility of 0.8 cm(2)/V s for the OTFT with shorted source-drain. High-frequency measurements of those diode structures in a rectifier configuration show that both types of diodes are able to follow the base-carrier frequency of 13.56 MHz which is essential for viable radio-frequency-identification (rf-ID) tags. Based on those results we evaluate the performance limits and advantages of each diode configuration regarding their application in an organic rf-ID tag.
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页数:7
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