Conductance quantization and magnetoresistance in magnetic point contacts

被引:114
作者
Imamura, H [1 ]
Kobayashi, N
Takahashi, S
Maekawa, S
机构
[1] Tohoku Univ, CREST, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[3] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
D O I
10.1103/PhysRevLett.84.1003
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We theoretically study the electron transport through a magnetic point contact (PC) with special at tention given to the effect of an atomic scale domain wall (DW). The spin precession of a conduction electron is forbidden in such an atomic scale DW and the sequence of quantized conductances depends on the relative orientation of magnetizations between left and right electrodes. The magnetoresistance is strongly enhanced for the narrow PC and oscillates with the conductance.
引用
收藏
页码:1003 / 1006
页数:4
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