Analytical and computer modelling of suns-Voc silicon solar cell characteristics

被引：10

作者：

Cuevas, Andres ^{[1
]}

Tan, Jason ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Engn, Canberra, ACT 0200, Australia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Solar cell modelling; Suns-V-oc measurements; I-V characteristics;

D O I：

10.1016/j.solmat.2008.11.041

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Theoretical modelling of suns-V-oc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：958 / 960

页数：3