Coulomb blockade in quasimetallic silicon-on-insulator nanowires

被引：51

作者：

Tilke, A

Blick, RH

Lorenz, H

Kotthaus, JP

Wharam, DA

机构：

[1] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany

[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany

[3] Univ Tubingen, Inst Phys, D-72076 Tubingen, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors. (C) 1999 American Institute of Physics. [S0003-6951(99)03549-4].

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页码：3704 / 3706

页数：3

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