Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

被引：33

作者：

Wang, S ^{[1
]}

Eckau, A ^{[1
]}

Neufeld, E ^{[1
]}

Carius, R ^{[1
]}

Buchal, C ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 19期

关键词：

D O I：

10.1063/1.120147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the 1.5 mu m electroluminescence from implanted Er ions inside the SiO2 insulator of a silicon metal-oxide-semiconductor structure under forward bias. The Er ions are excited by the direct impact from electrons tunneling through the oxide at electric fields larger than 6 MV/cm. Under these conditions, we measured an excitation cross-section of 6+/-2X10(-15) cm(2) and a lifetime of the excited I-4(I3/2) level of 1.5 ms. (C) 1997 American Institute of Physics. [S0003-6951(97)04145-4].

引用

页码：2824 / 2826

页数：3

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