Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth

被引：7

作者：

Linnarsson, MK

Forsberg, U

Janson, MS

Janzén, E

Svensson, BG

机构：

[1] Royal Inst Technol, SE-16440 Kista, Stockholm, Sweden

[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[3] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

CVD; deuterium; hydrogen; SIMS;

D O I：

10.4028/www.scientific.net/MSF.389-393.565

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen depth distribution in 4H-SiC after epitaxial growth at 1600 degreesC has been studied in detail with secondary ion mass spectrometry. Both H-1 and H-2 have been employed as carrier gas to trace the origin of the incorporated hydrogen. In particular the substrate as a prospective hydrogen source has been considered. After growth H-2 is detected throughout the whole substrate (similar to400 mum) and a considerable quantity remains after annealing at 1500 degreesC for 15 minutes.

引用

页码：565 / 568

页数：4

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