InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency

被引：121

作者：

Kovsh, AR

Maleev, NA

Zhukov, AE

Mikhrin, SS

Vasil'ev, AP

Shernyakov, YM

Maximov, MV

Livshits, DA

Ustinov, VM

Alferov, ZI

Ledentsov, NN

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 19期

关键词：

D O I：

10.1049/el:20020793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 muM. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 mum, threshold current density of 147 A/CM2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device.

引用

页码：1104 / 1106

页数：3

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