Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect

被引:105
作者
Jung, Yeonwoong [1 ]
Lee, Se-Ho [1 ]
Ko, Dong-Kyun [1 ]
Agarwal, Ritesh [1 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
关键词
D O I
10.1021/ja065938s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials Copyright © 2006 American Chemical Society.
引用
收藏
页码:14026 / 14027
页数:2
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