Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

被引：23

作者：

Kim, JR ^{[1
]}

Kim, BK

Lee, IJ

Kim, JJ

Kim, J ^{[1
]}

Lyu, SC

Lee, CJ

机构：

[1] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

[2] Korea Res Inst Stand & Sci, Elect Device Grp, Taejon 305600, South Korea

[3] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.69.233303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of similar to150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

引用

页码：233303 / 1

页数：4

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