Correlation of anomalous Hall resistivity, magnetoresistance, and magnetization in thin films of La2/3Sr1/3MnO3

被引:18
作者
Chen, JC [1 ]
Law, SC
Tung, LC
Chi, CC
Guan, WY
机构
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan
关键词
D O I
10.1103/PhysRevB.60.12143
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Hall resistivity rho(H) and magnetoresistance of La2/3Sr1/3MnO3 (T(C)similar to 360 K) have been measured at temperatures up to 300 K in fields to 6 T. The linear correlation between the anomalous Hall coefficient R-s and the longitudinal resistivity rho related to skew scattering is found. The change of the anomalous part is attributed to the thermal spin fluctuation that could be described by an empirical relation R-s proportional to [M(0)-M(T)]. The correlation among R-s, rho, and [M(0)-M(T)] directly suggests that the dependence of resistivity may be described by the scattering due to thermal spin disorder. [S0163-1829(99)01841-X].
引用
收藏
页码:12143 / 12148
页数:6
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