SCALPEL proof-of-concept system: Preliminary lithography results

被引：10

作者：

Waskiewicz, WK

Biddick, CJ

Blakey, MI

Brady, KJ

Camarda, RM

Connelly, WF

Crorken, AH

Custy, JP

DeMarco, R

Farrow, RC

Felker, JA

Fetter, LA

Freeman, R

Harriott, LR

Hopkins, LC

Huggins, HA

Kasica, RJ

Knurek, CS

Kraus, JS

Liddle, JA

Mkrtchyan, MM

Novembre, AE

Peabody, ML

Rutberg, L

Wade, HH

Watson, GP

Werder, KS

Windt, DL

TarasconAuriol, RG

Berger, SD

Bowler, SW

机构：

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES | 1997年 / 3048卷

关键词：

lithography; e-beam; mask; resist; process latitude;

D O I：

10.1117/12.275786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed, constructed, and are now performing experiments with a proof-of-concept projection electron-beam lithography system based upon the SCALPEL(R) (SCattering with angular Limitation Projection Electron-beam Lithography) principle. This initial design has enabled us to demonstrate the feasibility of not only the electron optics, but also the scattering mask and resist platform. In this paper we report on some preliminary results which indicate the lithographic potential and benefits of this technology for the production of sub-0.18 mu m features.

引用

页码：255 / 263

页数：9