New control method for low temperature deposition limit of metalorganic chemical vapor deposition (MOCVD) by the introduction of organic vapor-application to ZrO2 film preparation

A decrease in the deposition temperature limit of a Zr-O film prepared by metal-organic chemical vapor deposition (MOCVD) was carried out with the introduction of organic vapor. When the vapor of 1-hexen-3-ol was introduced into the Zr(C11H19O2)(4)O-2 system, the deposition temperature limit of the film was decreased from 500 to 350 degreesC. Moreover, the deposition rate increased at all deposition temperatures from 450 to 350 degreesC. This deposition character change was not observed when the vapor of 3-hexanol was introduced. However, the deposition rate was contrarily decreased for the Zr(O(.)t-C4H9)(4)-O-2 system by the introduction of 1-hexen-3-ol. This shows that the vapor of 1-hexen-3-ol is effective for Zr(C11H19O2)(4), but not for Zr(O(.)t-C4H9)(4). The evaporation character of Zr(C4H9O2)(4) was not ascertained to be affected by the introduction of the vapor of 1-hexen-3-ol. These results show that the effect of 1-hexen-3-ol is determined not only by the metallic element, but also by the ligand of the source material. (C) 2002 Elsevier Science BV All rights reserved.