Evaluation of some basic positron-related characteristics of SiC

被引:102
作者
Brauer, G
Anwand, W
Nicht, EM
Kuriplach, J
Sob, M
Wagner, N
Coleman, PG
Puska, MJ
Korhonen, T
机构
[1] ACAD SCI CZECH REPUBL,INST PHYS MAT,CZ-61662 BRNO,CZECH REPUBLIC
[2] UNIV HALLE WITTENBERG,FACHBEREICH PHYS,D-06108 HALLE,GERMANY
[3] UNIV E ANGLIA,SCH PHYS,NORWICH NR4 7TJ,NORFOLK,ENGLAND
[4] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO,FINLAND
[5] CHARLES UNIV,DEPT LOW TEMP PHYS,CZ-18000 PRAGUE,CZECH REPUBLIC
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 04期
关键词
D O I
10.1103/PhysRevB.54.2512
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles electronic structure and positron-state calculations for perfect and defected 3C- and 6H-SiC polytypes of SIC have been performed. Monovacancies and divacancies have been treated; the influence of lattice position and nitrogen impurities have been considered in the former case. Positron affinities and binding energies have been calculated; trends are discussed, and the results compared with recent atomic superposition method calculations. Experimental determination of the electron and positron work functions of the same 6H-SiC allows an assessment of the accuracy of the present first-principles calculations, and to suggest further improvements.
引用
收藏
页码:2512 / 2517
页数:6
相关论文
共 28 条
[1]  
Andersen O.K., 1986, Electronic band structure and its applications, DOI DOI 10.1007/3540180982_1
[2]  
BRANDT W, 1983, P INT SCH PHYSICS E, V83
[3]   POSITRON STUDIES OF POLYCRYSTALLINE TIC [J].
BRAUER, G ;
ANWAND, W ;
NICHT, EM ;
COLEMAN, PG ;
KNIGHTS, AP ;
SCHUT, H ;
KOGEL, G ;
WAGNER, N .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (47) :9091-9099
[4]  
BRAUER G, IN PRESS PHYS REV B
[5]  
BRAUER G, 1995, NUCL ENG DES, V158, P151
[6]   A COMPUTER-CONTROLLED SYSTEM FOR SLOW POSITION IMPLANTATION SPECTROSCOPY [J].
CHILTON, NB ;
COLEMAN, PG .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1995, 6 (01) :53-59
[7]   AB-INITIO STUDY OF POSITRON TRAPPING AT A VACANCY IN GAAS [J].
GILGIEN, L ;
GALLI, G ;
GYGI, F ;
CAR, R .
PHYSICAL REVIEW LETTERS, 1994, 72 (20) :3214-3217
[8]  
Glasov P. A., 1989, SPRINGER P PHYSICS, V34, P13
[9]   INFLUENCE OF ATOMIC RELAXATIONS ON THE STRUCTURAL-PROPERTIES OF SIC POLYTYPES FROM AB-INITIO CALCULATIONS [J].
KACKELL, P ;
WENZIEN, B ;
BECHSTEDT, F .
PHYSICAL REVIEW B, 1994, 50 (23) :17037-17046
[10]   DEFECTS IN PLASTICALLY DEFORMED SEMICONDUCTORS STUDIED BY POSITRON-ANNIHILATION - SILICON AND GERMANIUM [J].
KRAUSEREHBERG, R ;
BROHL, M ;
LEIPNER, HS ;
DROST, T ;
POLITY, A ;
BEYER, U ;
ALEXANDER, H .
PHYSICAL REVIEW B, 1993, 47 (20) :13266-13276