Exchange anisotropy in epitaxial NiO(001)-fcc Co bilayers

被引：6

作者：

Dubourg, S ^{[1
]}

Negre, N

Warot, B

Snoeck, E

Goiran, M

Ousset, JC

Bobo, JF

机构：

[1] Univ Toulouse 3, INSA, CNRS, LPMC,UMR 5830, F-31077 Toulouse 4, France

[2] CNRS, CEMES, F-31055 Toulouse, France

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have sputter deposited NiO-Co bilayers on MgO (001) substrates. NiO grows epitaxially on MgO at 800 degrees C and subsequently room temperature deposited Co films have a fcc crystal structure in epitaxy with the oxide underlayer. Bias fields higher than 700 Oe at 5 K were reported. Polar Kerr effect measurements evidence saturation fields for perpendicular magnetization up to 15 T at low temperature, proof for a strong NiO-Co exchange interaction. The formation of a domain wall in the Co layer is a possible mechanism for such large saturation fields. (C) 2000 American Institute of Physics. [S0021-8979(00)36108-4].

引用

页码：4936 / 4938

页数：3

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