Kinetics of radicals in CF4 and C4F8 electron cyclotron resonance plasmas

被引:40
作者
Miyata, K
Hori, M
Goto, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 08期
关键词
plasma; radical; fluorocarbon; IRLAS; ECR; CF4; C4F8; CF2; CF;
D O I
10.1143/JJAP.36.5340
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temporal variations in densities of CF and CF2 radicals were measured at rising phases of plasma ignition in CF4 and C4F8 electron-cyclotron-resonance (ECR) plasmas by infrared diode laser absorption spectroscopy. It was found that CF2 radical densities at the rising phase briefly became larger than those at; the steady state in the C4F8 plasma. This finding shows that the CF2 is generated in abundance by the rapid dissociation of C4F8 molecules at the discharge ignition. The variations of CF2 and CF radical densities were demonstrated using a computer calculation to characterize the chemistry in the CF4 and C4F8 plasmas numerically. Chemical models in the CF4 and C4F8 ECR plasmas were presented based on the results obtained by the experiment and calculation. The models suggested that the higher fluorocarbons, that is C-X-F-Y (X greater than or equal to 2), were important in the C4F8 plasma as dissociation paths from C4F8 molecules to CFX (X = 1-3) radicals and as polymer precursors.
引用
收藏
页码:5340 / 5345
页数:6
相关论文
共 24 条
[1]   COMPUTER CALCULATION OF NEUTRAL RADICAL DENSITIES IN A CF4 ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING SYSTEM [J].
ASHTIANI, KA ;
SHOHET, JL ;
HARVEY, REP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1136-1141
[2]   COMBINED EXPERIMENTAL AND MODELING STUDY OF SPATIAL EFFECTS IN PLASMA-ETCHING - CF4/O2 ETCHING OF SILICON [J].
DALVIE, M ;
JENSEN, KF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (04) :1062-1078
[3]   INFRARED DIODE-LASER SPECTRUM OF THE NU-1 BAND OF CF2(X1A1) [J].
DAVIES, PB ;
LEWISBEVAN, W ;
RUSSELL, DK .
JOURNAL OF CHEMICAL PHYSICS, 1981, 75 (12) :5602-5608
[4]   COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON [J].
EDELSON, D ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1522-1531
[5]   Radical behavior in fluorocarbon plasma and control of silicon oxide etching by injection of radicals [J].
Goto, T ;
Hori, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B) :6521-6527
[6]   Production and destruction of CFx radicals in radio-frequency fluorocarbon plasmas [J].
Haverlag, M ;
Stoffels, WW ;
Stoffels, E ;
Kroesen, GMW ;
deHoog, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02) :384-390
[7]  
HUI JCH, 1982, IEEE T ELECTRON DEV, V29, P554
[8]  
IIO M, 1996, 43 SPR M JAP SOC APP
[9]   INFRARED DIODE-LASER SPECTROSCOPY OF THE CF RADICAL [J].
KAWAGUCHI, K ;
YAMADA, C ;
HAMADA, Y ;
HIROTA, E .
JOURNAL OF MOLECULAR SPECTROSCOPY, 1981, 86 (01) :136-142
[10]   Model prediction of radical composition in C4F8 plasmas and correlation with measured etch characteristics of silicon dioxide [J].
Kazumi, H ;
Hamasaki, R ;
Tago, K .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1996, 5 (02) :200-209