共 24 条
[1]
COMPUTER CALCULATION OF NEUTRAL RADICAL DENSITIES IN A CF4 ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING SYSTEM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1993, 11 (04)
:1136-1141
[5]
Radical behavior in fluorocarbon plasma and control of silicon oxide etching by injection of radicals
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (12B)
:6521-6527
[6]
Production and destruction of CFx radicals in radio-frequency fluorocarbon plasmas
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1996, 14 (02)
:384-390
[7]
HUI JCH, 1982, IEEE T ELECTRON DEV, V29, P554
[8]
IIO M, 1996, 43 SPR M JAP SOC APP