Formation of Lateral Low Density In(Ga)As Quantum Dot Pairs in GaAs Nanoholes

被引：33

作者：

Alonso-Gonzalez, P. ^{[1
]}

Martin-Sanchez, J. ^{[1
]}

Gonzalez, Y. ^{[1
]}

Alen, B. ^{[1
]}

Fuster, D. ^{[1
]}

Gonzalez, L. ^{[1
]}

机构：

[1] IMM CNM CSIC, Inst Microelect Madrid, Madrid 28760, Spain

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 05期

关键词：

DROPLET EPITAXY; GAAS(001);

D O I：

10.1021/cg900065v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work we present a growth procedure to form lateral In(Ga)As quantum dot pairs by using it low density. 2 x 10(8) cm(-2), GaAs nanohole template previously formed in situ by droplet homoepitaxy. In particular, by changing the arsenic pressure at which InAs is grown on the template, we demonstrate the possibility to select the formation of single quantum dots (QD) or QD pairs inside each of the nanoholes. In the case of QD pairs, the ensemble photoluminescence (PL) as a function of excitation power and temperature reveals spectral signatures typical of laterally coupled nanostructures.

引用

页码：2525 / 2528

页数：4

共 25 条

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