Preferential Co-Si bonding at the Co/SiGe(100) interface

被引：13

作者：

Boyanov, BI ^{[1
]}

Goeller, PT ^{[1
]}

Sayers, DE ^{[1
]}

Newmanich, RJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 21期

关键词：

D O I：

10.1063/1.119436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stages of the reaction of Co with Si0.79Ge0.21(100) were studied in situ with extended x-ray absorption fine structure spectroscopy and reflection high energy electron diffraction. The Si:Ge ratio in the first coordination shell of Co in sub-monolayer Co films was found to increase with film thickness and annealing temperature, indicating preferential formation of Go-Si bonds. The impact of the observed preference for Go-Si bonding on the morphology of epitaxial CoSi2/Si1-xGex heterostructures is discussed. (C) 1997 American Institute of Physics.

引用

页码：3060 / 3062

页数：3

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