TEM assessment of GaN epitaxial growth

被引：12

作者：

Brown, PD

机构：

[1] Univ Nottingham, Sch Mech Mat Mfg Engn & Management, Nottingham NG7 2RD, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

TEM; defects; semiconductors; GaN;

D O I：

10.1016/S0022-0248(99)00668-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A generalised description of the predominant defect microstructures within homo- and hetero-epitaxial GaN grown by chemical vapour deposition and molecular beam epitaxy is presented. The nature of dislocations, basal and prismatic plane stacking faults, domain boundaries, micropipes, voids and inversion domains are briefly described, with particular regard being given to their mechanisms of formation. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：143 / 150

页数：8

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