Polarization and transverse-mode selection in quantum-well vertical-cavity surface-emitting lasers: index- and gain-guided devices

被引:48
作者
MartinRegalado, J
Balle, S
SanMiguel, M
Valle, A
Pesquera, L
机构
[1] Inst. Mediterraneo Estud. Avanzados, IMEDEA (CSIC-UIB), Universitat de les Illes Balears
[2] Departament de Física, Universitat de les Illes Balears
[3] Inst. de Física de Cantabria, Facultad de Ciencias
来源
QUANTUM AND SEMICLASSICAL OPTICS | 1997年 / 9卷 / 05期
关键词
D O I
10.1088/1355-5111/9/5/006
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We study polarization switching and transverse-mode competition in vertical-cavity surface-emitting lasers (VCSELs) in the absence of temperature effects. We use a model that incorporates the vector nature of the laser field, saturable dispersion, different carrier populations associated with different magnetic sublevels of the conduction and heavy hole valence bands in quantum-well media, spin-flip relaxation processes and cavity birefringence and dichroism. We consider both index-and gain-guided VCSELs and we find that spin-flip dynamics and the linewidth enhancement factor are crucial for the selection of the polarization state corresponding to a given injection current. For index-guided VCSELs the effect of spatial hole burning on the polarization behaviour within the fundamental mode regime is discussed. For gain-guided VCSELs, transverse-mode and polarization selection are studied within a Maxwell-Bloch approximation which includes field diffraction and carrier diffusion. Polarization switching is found in the fundamental mode regime. The first-order transverse mode starts lasing orthogonally polarized to the fundamental mode. At larger currents polarization coexistence with several active transverse modes occurs.
引用
收藏
页码:713 / 736
页数:24
相关论文
共 70 条
[1]  
[Anonymous], 2021, VERTICAL EXTERNAL CA, DOI DOI 10.1002/9783527807956
[2]  
[Anonymous], SEMICONDUCTOR LASERS
[3]   EFFECTIVE 2-LEVEL-MODEL WITH ASYMMETRIC GAIN FOR LASER-DIODES [J].
BALLE, S .
OPTICS COMMUNICATIONS, 1995, 119 (1-2) :227-235
[4]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[5]   DYNAMIC, POLARIZATION, AND TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE EMITTING LASERS [J].
CHANGHASNAIN, CJ ;
HARBISON, JP ;
HASNAIN, G ;
VONLEHMEN, AC ;
FLOREZ, LT ;
STOFFEL, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1402-1409
[6]   TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE-EMITTING LASERS [J].
CHANGHASNAIN, CJ ;
ORENSTEIN, M ;
VONLEHMEN, A ;
FLOREZ, LT ;
HARBISON, JP ;
STOFFEL, NG .
APPLIED PHYSICS LETTERS, 1990, 57 (03) :218-220
[7]   POLARIZATION PROPERTIES OF A VERTICAL-CAVITY SURFACE-EMITTING LASER USING A FRACTIONAL LAYER SUPERLATTICE GAIN MEDIUM [J].
CHAVEZPIRSON, A ;
ANDO, H ;
SAITO, H ;
KANBE, H .
APPLIED PHYSICS LETTERS, 1993, 62 (24) :3082-3084
[8]   LASING MODE SELECTION IN VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES [J].
CHONG, CH ;
SARMA, J .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (07) :761-764
[9]   POLARIZATION MODULATION OF CRUCIFORM VERTICAL-CAVITY LASER-DIODES [J].
CHOQUETTE, KD ;
LEAR, KL ;
LEIBENGUTH, RE ;
ASOM, MT .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2767-2769
[10]   TEMPERATURE-DEPENDENCE OF GAIN-GUIDED VERTICAL-CAVITY SURFACE-EMITTING LASER POLARIZATION [J].
CHOQUETTE, KD ;
RICHIE, DA ;
LEIBENGUTH, RE .
APPLIED PHYSICS LETTERS, 1994, 64 (16) :2062-2064