Absorption and mid-infrared emission spectroscopy of Dy3+ in Ge-As(or Ga)-S glasses

被引:115
作者
Heo, J
Shin, YB
机构
[1] Non-Crystalline Materials Laboratory, Dept. of Mat. Sci. and Engineering, Pohang Univ. of Sci. and Technology, Pohang, Kyungbuk 790-784, San 31, Hyoja-dong, Nam-ku
关键词
D O I
10.1016/0022-3093(95)00579-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ge-As-S and Ge-Ga-S glasses doped with Dy3+ were prepared and the emission characteristics of four infrared fluorescent emissions al 1.33, 1.75, 2.90 and 4.38 mu m were evaluated. High oscillator strengths and large intensity parameters of Dy3+ originate from the highly covalent nature of the bonds in the glasses, Measured lifetimes in the Ge-As-S glass are 728 and 4550 mu s for the H-6(11/2) --> H-6(15/2) (1.75 mu m) and H-6(13/2) --> H-6(15/2) (2.90 mu m) transitions, respectively. Quantum efficiencies of 32.8 an 87.2% of the above transitions compare well with the values reported previously. Multiphonon relaxation rates in Ge-As-S and Ge-Ga-S glasses are similar to 4 orders of magnitude less than those in silicate glasses, which provide good opportunities for future laser applications.
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页码:162 / 167
页数:6
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