Measurement of high-field electron transport in silicon carbide

被引：107

作者：

Khan, IA ^{[1
]}

Cooper, JA ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 02期

关键词：

Electric field effects - Electron transport properties - Semiconducting aluminum compounds - Silicon carbide - Thermal effects;

D O I：

10.1109/16.822266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9 x 10(7) cm/s in 6H-SiC and 2.2 x 10(7) cm/s in 4H-SiC.

引用

页码：269 / 273

页数：5