Improved channel mobility in normally-off 4H-SiC MOSFETs with buried channel structure

被引：14

作者：

Harada, S ^{[1
]}

Suzuki, S

Senzaki, J

Kosugi, R

Adachi, K

Fukuda, K

Arai, K

机构：

[1] Ultra Low Loss Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] AIST, R&D Assoc, Future Elect Devices, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

4H-SiC; buried channel; channel mobility; MOSFETs; oxidation; threshold voltage;

D O I：

10.4028/www.scientific.net/MSF.389-393.1069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents that the channel mobility of 4H-SiC MOSFETs is significantly improved using the buried channel (BC) structure. The BC region was formed by nitrogen ion implantation at room temperature and following rapid thermal annealing. The effects of the depth of BC region and the thermal oxidation condition of the gate oxide on the channel mobility and threshold voltage were investigated. With the nitrogen concentration of 1 x 10(17) cm(-3), the optimal depth of the BC region was found to be 0.2 mum. When the gate oxide was grown by dry oxidation and following wet re-oxidation, the channel mobility of 140 cm(2)/Vs was achieved in the normally-off 4H-SiC BC MOSFET. This channel mobility is the highest reported for a normally-off MOSFET with a thermally grown gate oxide formed on 4H-SiC (0001) wafer.

引用

页码：1069 / 1072

页数：4

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