Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

被引：51

作者：

Macor, Lorena ^{[1
]}

Fungo, Fernando ^{[1
]}

Tempesti, Tomas ^{[1
]}

Durantini, Edgardo N. ^{[1
]}

Otero, Luis ^{[1
]}

Barea, Eva M. ^{[2
]}

Fabregat-Santiago, Francisco ^{[2
]}

Bisquert, Juan ^{[2
]}

机构：

[1] Univ Nacl Rio Cuarto, Dept Quim, RA-5800 Rio Cuarto, Argentina

[2] Univ Jaume 1, Dept Fis, Photovolta & Optoelect Devices Grp, Castellon de La Plana 12071, Spain

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2009年 / 2卷 / 05期

关键词：

NANOCRYSTALLINE TIO2 FILMS; HARVESTING INFRARED PHOTONS; EFFICIENT FAR-RED; SILICON-PHTHALOCYANINE; ELECTRON INJECTION; DYE; ZINC; COSENSITIZATION; DESIGN; CELLS;

D O I：

10.1039/b822954f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Near-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored Si-naphthalocyanine dye in the spectral sensitization of TiO2 nanostructured photoelectrodes. We report the first successful evaluation of a naphthalocyanine in the production of sensitized photocurrent with maximum incident photon to current efficiency (IPCE) at lambda similar to 790 nm.

引用

页码：529 / 534

页数：6

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