Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La0.67Sr.033MnO3 tunnel junctions

被引：383

作者：

Lu, Y

Li, XW

Gong, GQ

Xiao, G

Gupta, A

Lecoeur, P

Sun, JZ

Wang, YY

Dravid, VP

机构：

[1] IBM CORP, DIV RES, TJ WATSON RES CTR, YORKTOWN HTS, NY 10698 USA

[2] NORTHWESTERN UNIV, DEPT MAT SCI & ENGN, EVANSTON, IL 60208 USA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.54.R8357

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used a self-aligned lithographic process to fabricate magnetic tunnel junctions of La0.67Sr0.33MnO3 down to a few micrometers in size. We have obtained a magnetoreistance ratio as large as 83% at low magnetic fields of a few tens of Oe, which correspond to the coercivities of the magnetic layers. Transmission-electron-microscopy analysis has revealed the heteroepitaxial growth of the trilayer junction structure, La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. We have observed current-voltage characteristics typical of electron tunneling across an insulating barrier. The large magnetoresistance is likely due to the nearly half-metallic electronic structure of the manganites.

引用

页码：R8357 / R8360

页数：4

共 19 条

[1]

GANG X, 1987, J APPL PHYS, V61, P3246, DOI 10.1063/1.338917

[2] COLOSSAL MAGNETORESISTANCE OF 1,000,000-FOLD MAGNITUDE ACHIEVED IN THE ANTIFERROMAGNETIC PHASE OF LA1-XCAXMNO3 [J].