Ultraviolet light-induced apoptosis is associated with S-phase in primary human fibroblasts

被引:44
作者
McKay, BC
Becerril, C
Spronck, JC
Ljungman, M
机构
[1] Ottawa Reg Canc Ctr, Ctr Canc Therapeut, Ottawa, ON K1H 1C4, Canada
[2] Univ Ottawa, Dept Radiol, Ottawa, ON K1H 1C4, Canada
[3] Univ Ottawa, Dept Cellular & Mol Med, Ottawa, ON K1H 1C4, Canada
[4] Univ Michigan, Sch Med, Dept Radiat Oncol, Ann Arbor, MI 48109 USA
[5] Univ Michigan, Sch Publ Hlth, Dept Environm Hlth Sci, Ann Arbor, MI 48109 USA
关键词
apoptosis; DNA repair; p53; transcription-coupled nucleotide excision repair; ultraviolet light;
D O I
10.1016/S1568-7864(02)00109-X
中图分类号
Q3 [遗传学];
学科分类号
071007 ; 090102 ;
摘要
Transcription-coupled nucleotide excision repair (tcNER)-deficient human fibroblasts are extremely sensitive to the induction of apoptosis in response to low doses of ultraviolet light (UV light), but are less sensitive to the induction of apoptosis following exposure to high doses [J. Invest. Dermatol. 117 (2001) 1162]. This seemingly paradoxical observation led us to re-evaluate the relationship between UV dose and the induction of apoptosis. Here we report that the reduction in the extent of UV-induced apoptosis in tcNER-deficient strains following exposure to elevated doses of UV light does not result from impaired gene expression alone because neither inhibitors of transcription nor inhibitors of translation blocked UV-induced apoptosis. Furthermore, UV-induced apoptosis was greatly reduced by inhibiting S-phase progression with either mimosine or serum withdrawal. Importantly, DNA synthesis following UV-irradiation occurred only at doses that induced apoptosis in these cell lines and the apoptotic cells contained nascent DNA. Moreover, deregulation of G1- to S-phase transition by expression of human papillomavirus E7 sensitized cells to UV-induced apoptosis. Taken together these results suggest that the induction of apoptosis requires S-phase progression following UV-irradiation. © 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:811 / 820
页数:10
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