A novel cadmium free buffer layer for Cu(In,Ga)Se-2 based solar cells

被引:141
作者
Hariskos, D
Ruckh, M
Ruhle, U
Walter, T
Schock, HW
Hedstrom, J
Stolt, L
机构
[1] NORD SOLAR ENERGY AB,S-16421 KISTA,SWEDEN
[2] UNIV UPPSALA,DEPT TECHNOL,S-7521 UPPSALA,SWEDEN
关键词
D O I
10.1016/0927-0248(96)80009-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Solar cells based on Cu(In,Ga)Se, were prepared replacing the ''standard buffer layer'' CdS with a In-x(OH,S)(y) thin film. The film is deposited in a chemical bath (CBD) process using an aqueous solution containing InCl3 and thioacetamide. X-ray photoemission spectroscopy measurements were performed in order to characterize the growth kinetics and the chemical composition. The influence of different concentrations of InCl3 and thioacetamide in the solution on the electrical properties of the solar cells was studied by measuring the j-V characteristics and the spectral quantum efficiencies. Capacitance-voltage (C-V) measurements indicate that the high V-alpha values of devices with the novel buffer layer are correlated with narrower space charge widths and higher effective carrier concentrations in the absorber materials. The achieved conversion efficiency of 15.7% (active area) using the cadmium free In-x(OH,S)(y) buffer demonstrates the potential of this process as an alternative to the standard chemical bath deposition of CdS.
引用
收藏
页码:345 / 353
页数:9
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