Formation of MgB2 at low temperatures by reaction of Mg with B6Si

被引:11
作者
Cooley, LD [1 ]
Kang, K [1 ]
Klie, RF [1 ]
Li, Q [1 ]
Moodenbaugh, AM [1 ]
Sabatini, RL [1 ]
机构
[1] Brookhaven Natl Lab, Div Mat Sci, Upton, NY 11973 USA
关键词
D O I
10.1088/0953-2048/17/7/020
中图分类号
O59 [应用物理学];
学科分类号
摘要
Formation of MgB2 by reactions of Mg with B6Si and Mg with B were compared, the former also producing Mg2Si as a major product. Compared to the binary system, the ternary reactions for identical time and temperature were more complete at 750degreesC and below, as indicated by higher diamagnetic shielding and larger x-ray diffraction peak intensities relative to those of Mg. MgB2 could be produced at temperatures as low as 450degreesC by the ternary reaction. Analyses by electron microscopy, x-ray diffraction and of the upper critical field show that Si does not enter the MgB2 phase.
引用
收藏
页码:942 / 946
页数:5
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