A general approach to the epitaxial growth of rare-earth-transition-metal films

被引：59

作者：

Fullerton, EE

Sowers, CH

Pearson, JP

Bader, SD

Wu, XZ

Lederman, D

机构：

[1] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115

[2] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439

[3] W VIRGINIA UNIV,DEPT PHYS,MORGANTOWN,WV 26506

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of epitaxial rare-earth transition-metal thin films is reported by magnetron sputtering on single-crystal MgO substrates, The use of epitaxial W buffer layers demonstrates a general approach to control the phase and orientation of the films. Structure and magnetism results for SmFe12(001) on W(100) and magnetically hard Sm2Co7 (110) and (001) on W(100) and (110), respectively, are highlighted to illustrate the utility of the approach. (C) 1996 American Institute of Physics.

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页码：2438 / 2440

页数：3

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