Fabrication and characterization of Fe81Ga19 thin films

被引：46

作者：

Weston, JL ^{[1
]}

Butera, A ^{[1
]}

Lograsso, T ^{[1
]}

Shamsuzzoha, M ^{[1
]}

Zana, I ^{[1
]}

Zangari, G ^{[1
]}

Barnard, J ^{[1
]}

机构：

[1] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 05期

基金：

美国国家科学基金会;

关键词：

epitaxy; magnetoelastic materials; microelectromechanical systems (MEMS);

D O I：

10.1109/TMAG.2002.802468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to incorporate magnetostrictive actuators into microelectromechanical systems devices, thin film magnetoelastic materials must have both a high magnetostriction and a low saturation field. This work focuses on the fabrication and characterization of (110) oriented epitaxial FeGa thin films grown epitaxtally on Cu on Si. The material in the bulk exhibits a large magnetostriction and in thin film form is here shown to be easily saturated in all in-plane orientations in fields under 500 Oe. Thin (less than 160 nm) FeGa films grow according to a single (110) variant on Cu(100)/Si(100). On the contrary, thick (160 nm) films exhibit multiple (110) variants.

引用

页码：2832 / 2834

页数：3

共 10 条

[1] Effect of quenching on the magnetostriction of Fe1-xGax (0.13<x<0.21) [J].