Quantum confinement of phonon modes in GaAs quantum dots

被引:23
作者
Ren, SF [1 ]
Gu, ZQ
Lu, DY
机构
[1] Illinois State Univ, Dept Phys, Normal, IL 61790 USA
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
关键词
nanostructures; semiconductors; crystal structure and symmetry; phonons;
D O I
10.1016/S0038-1098(99)00473-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Phonon modes in spherical GaAs quantum dots (QDs) with up to 11,855 atoms (8 nm in size) are calculated by using an empirical microscopic model. The group theory is employed to reduce the computational intensity, which further allows us to investigate the quantum confinement of phonon modes with different symmetries and reveals a phenomenon that phonon modes with different symmetries have different quantum confinement effect. For zinc-blende structure, the modes with the A(1) symmetry has the strongest quantum confinement effect and the T-1 modes the weakest. This could cause a crossover of symmetries of the highest frequency from A(1) to T-2 when the size of QDs decreases. (C) 1999 Elsevier Science Ltd, All rights reserved.
引用
收藏
页码:273 / 277
页数:5
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