Influence of Xe adlayer morphology and electronic structure on image-potential state lifetimes of Ru(0001)

被引:45
作者
Berthold, W
Höfer, U [1 ]
Feulner, P
Menzel, D
机构
[1] Max Planck Inst Quantum Opt, D-85740 Garching, Germany
[2] Univ Marburg, Fachbereich Phys, D-35037 Marburg, Germany
[3] Tech Univ Munich, Phys Dept E20, D-85747 Garching, Germany
关键词
D O I
10.1016/S0301-0104(99)00329-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The dynamics of image-potential states of clean and Xe-covered Ru(0001) was investigated by means of time-resolved two-photon photoemission. Xe adsorption is found to cause a substantial increase of the lifetime of the first image-potential state from 11 fs for the clean surface to 125 fs for a bilayer of Xe. The lifetimes in the presence of the commensurate and the incommensurate monolayer phases differ distinctly; 36 fs and 52 fs, respectively, were obtained on the two phases. The lifetime of the second image-potential state shows a weaker dependence on Xe coverage. A simple tunneling model and a dielectric continuum model are used to estimate the reduced coupling of the wave function of the image-potential states with the metallic substrate which is responsible for the increased lifetime in the presence of Xe layers. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:123 / 132
页数:10
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