Are electrical switching and rectification inherent properties of carbon nanotube Y junctions?

被引:7
作者
Andriotis, Antonis N.
Menon, Madhu
机构
[1] Inst Elect Struct & Laser, Fdn Res & Technol Hellas, Iraklion 71110, Crete, Greece
[2] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
[3] Univ Kentucky, Ctr Computat Sci, Lexington, KY 40506 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2354014
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recent experimental results on carbon nanotube Y junctions have indicated ballistic rectification and switching, making them promising candidates for molecular device applications. The question still persists, however, whether this switching is the result of inherent nanotube properties or caused by the remnants of catalyst particles in the junction region of the nanotubes. In the present work, through a detailed theoretical calculation of quantum conductance of Y junctions with and without the presence of catalyst particles blocking the junction region the authors show that rectification and switching properties can be attributable entirely to the inherent nanotube properties and not to the catalysts. (c) 2006 American Institute of Physics.
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页数:3
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