Microstructural development of dispersion strengthened Cu thin films

被引：2

作者：

Weiss, D ^{[1
]}

Kraft, O ^{[1
]}

Arzt, E ^{[1
]}

机构：

[1] Max Planck Inst Met Res, D-70174 Stuttgart, Germany

来源：

POLYCRYSTALLINE METAL AND MAGNETIC THIN FILMS | 1999年 / 562卷

关键词：

D O I：

10.1557/PROC-562-257

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The internal oxidation method is applied for the first time to produce a fine dispersion of second phase particles in thin films. A processing route is presented which includes ultra-high vacuum magnetron sputtering of about 1 mu m thick alloy films onto Si substrates followed by insitu annealing and oxidation. Two different Cu-base alloys are examined, Cu-Y and Cu-Al, in which the extent of miscibility differs significantly. This has considerable influence on the grain growth behavior. Nanoindention and wafer-curvature experiments show a drastic improvement of both room-temperature and high-temperature strength. Phenomena well known from bulk oxide-dispersion strengthened (ODS) alloys are found to appear in the thin films as well: Results on abnormal grain growth and the formation of creep voids are presented and discussed in terms of particle effects.

引用

页码：257 / 262

页数：6

共 9 条

[1] ON CREEP FRACTURE BY VOID GROWTH [J].