Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate

被引：325

作者：

Shulman, HS ^{[1
]}

Testorf, M ^{[1
]}

Damjanovic, D ^{[1
]}

Setter, N ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,LAB CERAM,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1996年 / 79卷 / 12期

关键词：

D O I：

10.1111/j.1151-2916.1996.tb08086.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A study was conducted on the effects of microstructure, atmosphere, and several dopants on the electrical conductivity of bismuth titanate (Bi4Ti3O12, BIT), Increased grain size increased the conductivity in undoped BIT as did acceptor dopants that substituted for either Bi (Ca and Sr) or Ti (Fe), A donor dopant (Nb) decreased the conductivity in BIT by as much as 3 orders of magnitude, The increased resistivity of Nb-doped BIT improved the polarization in an electric field, A piezoelectric coefficient, d(33), of 20.0 pC/N was achieved with a Nb-doped BIT composition corresponding to Bi4Ti2.86Nb0.14O12.

引用

页码：3124 / 3128

页数：5

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