Megasonic excited ozonized water for the cleaning of silicon surfaces

被引:34
作者
Ojima, S [1 ]
Kubo, K [1 ]
Kato, M [1 ]
Toda, M [1 ]
Ohmi, T [1 ]
机构
[1] YAMAGATA UNIV,FAC ENGN,DEPT MAT SCI & ENGN,YONEZAWA,YAMAGATA 992,JAPAN
关键词
D O I
10.1149/1.1837616
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Conditions to remove contaminations adsorbed on a surface in wet cleaning processes have to be perfectly controlled. Megasonic excitation of ozonized water removes hydrocarbon contamination from silicon surfaces. When ozonized water was excited by megasonics at a frequency of about 1 MHz, OH radicals were produced in the cleaning solution. As a result, we have shown that hydrocarbons on the wafer surface were oxidized by OH radicals, leading to hydrocarbon-free Si surfaces.
引用
收藏
页码:1482 / 1487
页数:6
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