Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates

被引：12

作者：

Ishida, T

Yamamoto, Y

Hayafuji, N

Miyakuni, S

Hattori, R

Ishikawa, T

Mitsui, Y

机构：

来源：

1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/ICIPRM.1997.600093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly reliable AlInAs/InGaAs high electron mobility transistor with the projected life time of 10(6) hours at 125 degrees C is developed, The gate electrode sinking is eliminated by adopting molybdenum gate contact metal, and the carrier passivation is controlled by eliminating the extrinsic fluorine containing processes. The experimental results and theoretical calculation indicate the present reliability is limited by the intrinsic fluorine contamination from the air.

引用

页码：201 / 204

页数：4