Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation

被引：17

作者：

Khan, FA ^{[1
]}

Zhou, L

Ping, AT

Adesida, I

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.591057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The etching characteristics of AlxGa1-xN grown by metal-organic chemical-vapor deposition were investigated in an inductively coupled plasma (ICP) reactive ion etching system using Cl-2/Ar gas mixtures. Etch rate variations with substrate bias voltage, ICP coil power, chamber pressure, Cl-2/Ar gas mixture ratios, and gas flow rates were investigated. The optimum chamber pressure for etching was found to be dependent on both the substrate bias voltage and ICP coil power. Anger electron spectroscopy analysis showed that: the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, independent of the etching conditions. Etching results were successfully applied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heterostructure laser materials. (C) 1999 American Vacuum Society. [S0754-211X(99)13506-6].

引用

页码：2750 / 2754

页数：5

共 16 条

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