Bromine functionalized molecular adlayers on hydrogen passivated silicon surfaces

被引:27
作者
Basu, R. [1 ]
Kinser, C. R. [1 ]
Tovar, J. D. [1 ]
Hersam, M. C. [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家航空航天局; 美国国家科学基金会;
关键词
silicon; Si(100); Si(111); hydrogen; passivation; bromine; styrene; 4-bromostyrene; x-ray photoclectron spectroscopy; XPS; ultra-high vacuum; UHV; scanning tunneling microscopy; STM; molecular electronics; sensing;
D O I
10.1016/j.chemphys.2005.12.023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Well controlled and characterized organic functionalization is a necessary precondition for the fabrication of many silicon-based molecular electronic and sensing devices. Of particular interest are organic modifications that incorporate bromine since heavy atoms can be directly interrogated by X-ray radiation and organohalides provide synthetic handles through which more chemically elaborate structures may be covalently bound to silicon. This paper specifically considers the functionalization of hydrogen passivated silicon surfaces with 4-bromostyrene. X-ray photoelectron spectroscopy confirms the reaction of 4-bromostyrene with monohydride Si(100) and Si(111) surfaces such that the bromine moiety is preserved on top of the organic adlayer. In addition, ultra-high vacuum scanning tunneling microscopy reveals that the 4-bromostyrene molecules assemble into one-dimensional nanostructures on the Si(100)-2 x 1:H surface. Overall, these experimental results demonstrate that styrene derivatives serve as effective organic molecules for the chemical functionalization of hydrogen passivated silicon surfaces. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:144 / 150
页数:7
相关论文
共 39 条
[1]   Atomic-level robustness of the Si(100)-2X1:H surface following liquid phase chemical treatments in atmospheric pressure environments [J].
Baluch, AS ;
Guisinger, NP ;
Basu, R ;
Foley, ET ;
Hersam, MC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03) :L1-L5
[2]   Scanning tunneling microscopy study of single molecule motion on the Si(100)-2 X 1 surface [J].
Basu, R ;
Tovar, JD ;
Hersam, MC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04) :1785-1789
[3]   Room temperature nanofabrication of atomically registered heteromolecular organosilicon nanostructures using multistep feedback controlled lithography [J].
Basu, R ;
Guisinger, NP ;
Greene, ME ;
Hersam, MC .
APPLIED PHYSICS LETTERS, 2004, 85 (13) :2619-2621
[4]  
Beamson G., 1992, ADV MATER, DOI DOI 10.1002/ADMA.19930051035
[5]   Modeling the adsorption of norbornadiene on the Si(001) surface: The predominance of non-[2+2]-cycloaddition products [J].
Bilic, A ;
Reimers, JR ;
Hush, NS .
JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (02) :1115-1126
[6]   Organometallic chemistry on silicon and germanium surfaces [J].
Buriak, JM .
CHEMICAL REVIEWS, 2002, 102 (05) :1271-1308
[7]  
CHASTIN J, 1995, HDB XRAY PHOTOELECTR, P10
[8]   ATOMIC HYDROGEN-DRIVEN HALOGEN EXTRACTION FROM SI(100) - ELEY-RIDEAL SURFACE KINETICS [J].
CHENG, CC ;
LUCAS, SR ;
GUTLEBEN, H ;
CHOYKE, WJ ;
YATES, JT .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (04) :1249-1252
[9]   Photoreactivity of unsaturated compounds with hydrogen-terminated silicon(111) [J].
Cicero, RL ;
Linford, MR ;
Chidsey, CED .
LANGMUIR, 2000, 16 (13) :5688-5695
[10]   Covalently attached saccharides on silicon surfaces [J].
de Smet, LCPM ;
Stork, GA ;
Hurenkamp, GHF ;
Sun, QY ;
Topal, H ;
Vronen, PJE ;
Sieval, AB ;
Wright, A ;
Visser, GM ;
Zuilhof, H ;
Sudhölter, EJR .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (46) :13916-13917