Instability and reliability of silicon field emission array

被引:8
作者
Li, Q [1 ]
Xu, JF [1 ]
Song, HB [1 ]
Liu, XF [1 ]
Kang, WP [1 ]
机构
[1] VANDERBILT UNIV,DEPT ELECT & COMP ENGN,NASHVILLE,TN 37235
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期
关键词
D O I
10.1116/1.588573
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The instability and reliability of silicon field emission cathode are investigated. The total instability is divided into four components which are extracted from the emitting current curve I(t). The appearance of the I(t) curve, the meaning and causes of the four components are described and discussed, respectively. Reliability is defined and a set of failure modes are reported To make a normalized measurement of reliability, a computerized system is proposed. (C) 1996 American Vacuum Society.
引用
收藏
页码:1889 / 1894
页数:6
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