Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

被引：17

作者：

Ellison, A

Radamson, H

Tuominen, M

Milita, S

Hallin, C

Henry, A

Kordina, O

Tuomi, T

Yakimova, R

Madar, R

Janzen, E

机构：

[1] OKMET LTD,FIN-02631 ESPOO,FINLAND

[2] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

[3] ABB CORP RES,S-72178 VASTERAS,SWEDEN

[4] HELSINKI UNIV TECHNOL,OPTOELECT LAB,FIN-02150 ESPOO,FINLAND

[5] ECOLE NATL SUPER PHYS GRENOBLE,MAT & GENIE PHYS LAB,CNRS,INPG,F-38402 ST MARTIN DHER,FRANCE

来源：

关键词：

X-ray diffraction; topography; bending; interface;

D O I：

10.1016/S0925-9635(97)00086-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relationship between the warpage of 4H-SiC CVD grown epi-wafers with crystal bending and substrate properties is investigated. The wafer surface preparation before and after epitaxy is found to affect both long range properties such as the wafer flatness and to some extent local properties such as the epi-substrate interface. Structural characterisation is carried out using X-ray diffraction techniques and KOH etching. (C) 1997 Elsevier Science S.A.

引用

页码：1369 / 1373

页数：5

共 11 条

[1] WHITE-BEAM SYNCHROTRON TOPOGRAPHIC STUDIES OF DEFECTS IN 6H-SIC SINGLE-CRYSTALS [J].