SiGe micro-cooler

被引：46

作者：

Zeng, GH ^{[1
]}

Shakouri, A

La Bounty, C

Robinson, G

Croke, E

Abraham, P

Fan, XF

Reese, H

Bowers, JE

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93196 USA

[2] Univ Calif Santa Cruz, Baskin Sch Engn, Santa Cruz, CA 95064 USA

[3] LLC, HRL Labs, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 24期

关键词：

D O I：

10.1049/el:19991435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film SiGe heterostructure coolers have been Fabricated and characterised. Cooling by as much as 1.1K at room temperature and 1.6K at a substrate temperature of 70 degrees C over a 3 mu m Si/SiGe superlattice barrier has bhn measured. This corresponds to cooling power densities of hundreds of watts per square centimetre.

引用

页码：2146 / 2147

页数：2

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