Monte Carlo study of the dynamic breakdown effects in HEMT's

被引：20

作者：

Di Carlo, A ^{[1
]}

Rossi, L

Lugli, P

Zandler, G

Meneghesso, G

Jackson, M

Zanoni, E

机构：

[1] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, INFM, I-00133 Rome, Italy

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy

[4] INFM, Unita Padova, I-35131 Padua, Italy

[5] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 04期

关键词：

D O I：

10.1109/55.830964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a theoretical investigation of the near-breakdown scenario in pseudomorphic high electron mobility transistors (HEMT's), We show that the main mechanism for the enhanced drain current is a parasitic bipolar effect due to holes, generated by impact ionization, which accumulate in the channel and in the substrate close to the source contact. The dynamic of this charge accumulation and of the consequent drain current increase is studied by means of a two-dimensional (2-D) Poisson Monte Carlo simulator.

引用

页码：149 / 151

页数：3

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