Dark-field contrast of elements in high-voltage electron microscopy

被引:1
作者
Bhattacharya, DK
Bhakat, P
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期
关键词
image contrast; dark field; tilted-beam imaging; high-voltage electron microscopy;
D O I
10.1143/JJAP.36.2918
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new and simple expression developed by us has been used for the estimation of contrast of thin amorphous specimens in the tilted-beam mode of dark field (DE) imaging using a conventional transmission electron microscope (CTEM). DF contrasts calculated for thin amorphous films of some representative elements in the electron accelerating voltage range between 0.1 to 3.0 MV have been compared with the corresponding bright field (BF.) contrasts. The magnitude of the gain in contrast in the DF mode compared with BF one, observed over a wide range of accelerating voltage (phi), microscope aperture (alpha) and atomic number (Z) of elements, has been highlighted.
引用
收藏
页码:2918 / 2921
页数:4
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