Atomic Layer Deposition of Lead Sulfide Thin Films for Quantum Confinement

被引：54

作者：

Dasgupta, Neil P. ^{[1
]}

Lee, Wonyoung ^{[1
]}

Prinz, Fritz B. ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

CHEMISTRY OF MATERIALS | 2009年 / 21卷 / 17期

关键词：

SOLAR-CELLS; BAND-GAP; EPITAXY; GROWTH; DOTS; LASERS;

D O I：

10.1021/cm901228x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lead sulfide (PbS) thin films were deposited by atomic layer deposition (ALD) for the fabrication of quantum well structures. A linear growth rate of 0.9 angstrom/cycle and pulse saturation behavior characteristic of ALD were observed. The stoichiometry of the films was confirmed using X-ray photoelectron spectroscopy (XPS) with no chemical contamination. The polycrystalline film morphology was observed with grain sizes ranging from 30 to 150 nm. Size quantization effects are shown oil the bandgap by fabricating PbS quantum wells with a sub-10 nm thickness. Bandgap values were measured by tunneling spectroscopy (TS) using scanning tunneling microscopy (STM) and are matched to an effective mass model. The bandgap of the films was changed from 0 4 to 2.75 eV by varying only the number of ALD cycles.

引用

页码：3973 / 3978

页数：6

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