Standing wave and skin effects in large-area, high-frequency capacitive discharges

被引:340
作者
Lieberman, MA [1 ]
Booth, JP
Chabert, P
Rax, JM
Turner, MM
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Ecole Polytech, LPTP, F-91128 Palaiseau, France
[3] Dublin City Univ, Sch Phys Sci, Plasma Res Lab, Dublin 9, Ireland
[4] Dublin City Univ, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland
关键词
D O I
10.1088/0963-0252/11/3/310
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Large-area capacitive discharges driven at frequencies higher than the usual industrial frequency of 13.56 MHz have attracted recent interest for materials etching and thin film deposition on large-area Substrates. Standing wave and skin effects can be important limitations for plasma processing uniformity, which cannot be described by conventional electrostatic theory. An electromagnetic theory is developed for a discharge having two plates of radius R and separation 21, which accounts for the propagation of surface and evanescent waves from the discharge edge into the centre and the role of capacitive and inductive fields in driving the power absorption. Examples of discharge fields are given having substantial standing wave and/or skin effects. The conditions for a uniform discharge without significant standing wave and skin effects are found to be, respectively. lambda(0) much greater than 2.6(l/s)(1/2) R and delta much greater than 0.45 (dR)(1/2), where lambda(0) is the free space wavelength, s is the sheath width, delta = c/omega(P) is the collisionless skin depth, with c the speed of light and omega(P) the plasma frequency, and d = l - s is the plasma half-width. Taking the equality for these conditions for a discharge radius of 50 cm, plate separation of 4 cm, and sheath width of 2 mm, there is a substantial skin effect for plasma densities greater than or similar to 10(10) cm(-3), and there is a substantial standing wave effect for frequencies f greater than or similar to 70 MHz.
引用
收藏
页码:283 / 293
页数:11
相关论文
共 28 条
[1]  
BOWERS KJ, 2002, IN PRESS PHYS PLASMA
[2]  
Colgan M. J., 1994, Plasma Sources, Science and Technology, V3, P181, DOI 10.1088/0963-0252/3/2/009
[3]   Electron surface waves in a nonuniform plasma slab [J].
Cooperberg, DJ .
PHYSICS OF PLASMAS, 1998, 5 (04) :862-872
[4]   Electron surface waves in a plasma slab with uniform ion density [J].
Cooperberg, DJ .
PHYSICS OF PLASMAS, 1998, 5 (04) :853-861
[5]  
Godyak V. A., 1976, Sov. J. Plasma Phys, V2, P78
[6]  
Godyak V.A., 1979, SOV J PLASMA PHYS, V5, P227
[7]   DUAL EXCITATION REACTIVE ION ETCHER FOR LOW-ENERGY PLASMA PROCESSING [J].
GOTO, HH ;
LOWE, HD ;
OHMI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (05) :3048-3054
[8]   INDEPENDENT CONTROL OF ION DENSITY AND ION-BOMBARDMENT ENERGY IN A DUAL RF-EXCITATION PLASMA [J].
GOTO, HH ;
LOWE, HD ;
OHMI, T .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1993, 6 (01) :58-64
[9]   Collisionless electron heating by capacitive rf sheaths [J].
Gozadinos, G ;
Turner, MM ;
Vender, D .
PHYSICAL REVIEW LETTERS, 2001, 87 (13) :1-135004
[10]   FREQUENCY-EFFECTS IN SILANE PLASMAS FOR PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
HOWLING, AA ;
DORIER, JL ;
HOLLENSTEIN, C ;
KROLL, U ;
FINGER, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :1080-1085