Germanium effect on oxygen precipitation in Czochralski silicon

被引：35

作者：

Li, H ^{[1
]}

Yang, DR ^{[1
]}

Ma, XY ^{[1
]}

Yu, XG ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 08期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1790578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxygen precipitation in germanium-doped Czochralski (GCZ) silicon has been investigated. After a prolonged annealing at 800 and 1000degreesC, it was found that the Ge-doping enhanced the formation of oxygen precipitates with a higher density and modified their morphology and size. Furthermore, the existing oxygen precipitates in the GCZ silicon were readily dissolved, because the Ge-doping facilitated the formation of smaller oxygen precipitates. Based on the facts, the mechanism for the enhancement effect of Ge-doping on oxygen precipitation has been preliminarily discussed. (C) 2004 American Institute of Physics.

引用

页码：4161 / 4165

页数：5

共 28 条

[1] Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon [J].

Aleksandrov, OV ;

Afonin, NN .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) :139-143

[2]

BABICH VM, 1995, SEMICONDUCTORS+, V29, P30

[3] OXYGEN PRECIPITATION IN SILICON [J].

BORGHESI, A ;

PIVAC, B ;

SASSELLA, A ;

STELLA, A .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244

[4]

Brelot A., 1971, International conference on radiation effects in semiconductors, P161

[5]

DASHEVSKII MY, 1989, INORG MATER+, V25, P580

[6]

DASHEVSKII MY, 1989, SOV PHYS SEMICOND+, V23, P461

[7]

DASHEVSKII MY, 1988, SOV PHYS SEMICOND+, V22, P725

[8]

DASHEVSKII MY, 1985, INORG MATER+, V21, P1591

[9] Growth and characterization of Ge1-xSix (x≤10at%) single crystals [J].

Dold, P ;

Barz, A ;

Recha, S ;

Pressel, K ;

Franz, M ;

Benz, KW .

JOURNAL OF CRYSTAL GROWTH, 1998, 192 (1-2) :125-135

[10] ENHANCED OXYGEN PRECIPITATION IN ELECTRON-IRRADIATED SILICON [J].

HALLBERG, T ;

LINDSTROM, JL .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) :5130-5138

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