Electron-phonon interactions for optical-phonon modes in few-layer graphene: First-principles calculations

被引：46

作者：

Yan, Jia-An ^{[1
]}

Ruan, W. Y. ^{[1
]}

Chou, M. Y. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 11期

基金：

美国国家科学基金会;

关键词：

ab initio calculations; conduction bands; electron-phonon interactions; graphene; monolayers; multilayers; valence bands; WALL CARBON NANOTUBES; BILAYER GRAPHENE; GRAPHITE; RENORMALIZATION; SPECTROSCOPY; TEMPERATURE;

D O I：

10.1103/PhysRevB.79.115443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical-phonon modes at Gamma and K in one-layer to three-layer graphene. It is found that, due to the interlayer coupling and the stacking geometry, the high-frequency optical-phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to different e-ph interaction strengths for these modes. Some of the multilayer optical modes derived from the Gamma-E-2g mode of monolayer graphene exhibit slightly higher frequencies and much reduced linewidths. In addition, the linewidths of K-A(1)(') related modes in multilayers depend on the stacking pattern and decrease with increasing layer numbers.

引用

页数：6

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