Spatially selective single-grain silicon films induced by hydrogen plasma seeding

被引：2

作者：

Bo, XZ ^{[1
]}

Yao, N

Wagner, S

Sturm, JC

机构：

[1] Princeton Univ, Ctr Photon & Optoelect Mat, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Princeton Mat Inst, Princeton, NJ 08544 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.1469016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon has been applied to form single crystalline silicon islands at designed locations. Holes with diameters from 0.4 to 1.8 mum were opened in silicon nitride, and then amorphous silicon films within the holes were exposed to a hydrogen plasma to create microcrystalline seeds. After furnace annealing, the relationship between the size of holes and number of grains in the holes has been investigated. It is found that a single nucleus cannot be induced until the diameter of holes decreases below 0.6 mum. Further annealing enlarges the grain size by lateral growth but does not increase the number of grains in the hole. (C) 2002 American Vacuum Society.

引用

页码：818 / 821

页数：4

共 10 条

[1] Nickel induced crystallization of amorphous silicon thin films [J].

Jin, ZH ;

Bhat, GA ;

Yeung, M ;

Kwok, HS ;

Wong, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :194-200

[2] MANIPULATION OF NUCLEATION SITES IN SOLID-STATE SI CRYSTALLIZATION [J].

KUMOMI, H ;

YONEHARA, T ;

NOMA, T .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3565-3567

[3] Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology [J].

Makihira, K ;

Asano, T .

APPLIED PHYSICS LETTERS, 2000, 76 (25) :3774-3776

[4] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[5]

MORITA T, 1994, MATER RES SOC SYMP P, V345, P71, DOI 10.1557/PROC-345-71

[6] Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega-electron-volt heavy-ion-beam irradiation - Reply [J].

Nakata, J .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :4237-4239

[7] Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films [J].

Pangal, K ;

Sturm, JC ;

Wagner, S ;

Büyüklimanli, TH .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1900-1906

[8] Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon [J].

Pangal, K ;

Sturm, JC ;

Wagner, S .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2091-2093

[9] High-performance germanium-seeded laterally crystallized TFT's for vertical device integration [J].

Subramanian, V ;

Saraswat, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1934-1939

[10]

Yin A., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P397, DOI 10.1109/IEDM.1993.347325

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